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HMC346
v02.0907
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz
Features
Wide Bandwidth: DC - 20 GHz Low Phase Shift vs. Attenuation 32 dB Attenuation Range Die Size: 0.85 x 0.85 x 0.1 mm
Typical Applications
2
ATTENUATORS - CHIP
This attenuator is ideal for use as a VVA for DC - 20 GHz applications: * Point-to-Point Radio * VSAT Radio
Functional Diagram
General Description
The HMC346 die is an absorptive Voltage Variable Attenuator (VVA) operating from DC - 20 GHz. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -3V. The device is ideal in designs where an analog DC control signal must control RF signal levels over a 30 dB amplitude range. For plastic packaged version, see the HMC346MS8G which operates from DC - 8 GHz.
Electrical Specifi cations, TA = +25 C, 50 ohm system
Parameter Insertion Loss DC - 12GHz: DC - 20 GHz: DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: 12 - 20 GHz: tRISE, tFALL (10/90% RF): tON, tOFF (50% CTL to 10/90% RF): Min. Atten: Atten. >2 dB: Min. Atten: Atten. >2 dB: 27 22 6 10 Min. Typ. 1.7 2.2 32 25 10 15 2 8 +8 +4 +25 +10 Max. 2.3 2.8 Units dB dB dB dB dB dB ns ns dBm dBm dBm dBm
Attenuation Range
Return Loss Switching Characteristics Input Power for 0.25 dB Compression (0.5 - 20 GHz) Input Third Order Intercept (0.5 - 20 GHz) (Two-tone Input Power = -8 dBm Each Tone)
2-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC346
v02.0907
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz
Relative Attenuation
0 -5 ATTENUATION (dB) -10 -15 -20 -25 -30 -35 -40
Insertion Loss vs. Temperature
0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 -3.5 -4 0 5 10 15 20 25 FREQUENCY (GHz)
+25 C -55 C +85 C
2
ATTENUATORS - CHIP
2-3
0
5
10
15
20
25
FREQUENCY (GHz)
Return Loss vs. Attenuation
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0 5 10 15 20 25 FREQUENCY (GHz)
MIN 5 dB MAX
Relative Attenuation vs. Control Voltage @ 10 GHz
0 -0.5 -1 -1.5 -2 -2.5 -3 0 5 10 15 20 25 30 RELATIVE ATTENUATION (dB)
V1 +25 C V1 -55 C V1 +85 C V2 +25 C V2 -55 C V2 +85 C
Relative Phase
240 220 200 RELATIVE PHASE (DEG) 180 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 FREQUENCY (GHz)
5 dB 10 dB 15 dB 20 dB 25 dB 30 dB max
Relative Attenuation vs. Control Voltage @ 20 GHz
0 -0.5 -1 -1.5 -2 -2.5 -3 0 5 10 15 20 25 RELATIVE ATTENUATION (dB)
V1 +25 C V1 -55 C V1 +85 C V2 +25 C V2 -55 C V2 +85 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
CONTROL VOLTAGE (Vdc)
CONTROL VOLTAGE (Vdc)
HMC346
v02.0907
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz
Input IP2 vs. Attenuation*
70 60 50 IP2 (dBm) 40 30 20 10
Input IP3 vs. Attenuation*
30
2
ATTENUATORS - CHIP
IP3 (dBm)
25 20 15 10 5 0 0 5 10 FREQUENCY (GHz) 15 20
0 dB 3 dB 6 dB 10 dB
0 dB 3 dB 6 dB 10 dB
0
5
10 FREQUENCY (GHz)
15
20
Input 0.25 dB Compression vs. Attenuation
15
Input 1 dB Compression vs. Attenuation
20
10 0.25 dB (dBm)
15
5
P1dB (dBm)
0 dB (REF) 6 dB
10
0
5
-5
0
0 dB (REF) 6 dB
-10 0 5 10 FREQUENCY (GHz) 15 20
-5 0 5 10 FREQUENCY (GHz) 15 20
Second Harmonic vs. Attenuation*
80 70 60 50 40 30 20 0 5 10 FREQUENCY (GHz) 15 20
Absolute Maximum Ratings
RF Input Power Control Voltage Range Storage Temperature Operating Temperature +18 dBm +1 to -5 Vdc -65 to +150 C -55 to +85 C
SECOND HARMONIC (dBc)
0 dB 3 dB 6 dB 10 dB
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
*Two-tone input power = -8 dBm each tone, 1 MHz spacing.
2-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC346
v02.0907
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz
Outline Drawing
2
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004" SQUARE. 3. TYPICAL BOND PAD SPACING IS .006" CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD
Die Packaging Information [1]
Standard GP-2 Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
Pad Descriptions
Pad Number Function RF1 Input, RF2 Output Description This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. Interface Schematic
1, 2
3, 6
V2, V1
Control Input (Master).
4
I
Control Input (Slave).
5
500
This pad must be DC grounded.
GND
Die bottom must be connected to RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
2-5
ATTENUATORS - CHIP
HMC346
v02.0907
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz
Single-Line Control Driver
2
ATTENUATORS - CHIP
External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges from 0 Volts (min. attenuation) to -3.0 Volts (max. attenuation.)
Assembly Diagram
2-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC346
v02.0907
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
2
ATTENUATORS - CHIP
2-7
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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